IPB180N04S4H0ATMA1N-Channel 40 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
1:$3.5820
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ABRmicro #.ABR2045-IPB180-940313
ManufacturerInfineon Technologies
MPN #.IPB180N04S4H0ATMA1
Estimated Lead Time12 Weeks
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Datasheet
IPB180N04S4-H0(PDF)
IPB180N04S4-H0(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.5820
Ext. Price$ 3.5820
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.5820$3.5820
10$3.0080$30.0790
100$2.4330$243.3130
500$2.1620$1081.0940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPB180
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)225 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17940 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance1.1mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-7-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 180µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB180N04S4H0ATMA1 is a robust N-Channel MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It operates with a maximum voltage of 40 V and can handle continuous currents up to 180A at a case temperature, with a power dissipation capacity of 250W at the same condition. Encased in a PG-TO263-7-3 surface-mount package, this MOSFET features low on-state resistance of approximately 1.1mOhm at 100A with a gate-source voltage of 10V. It has a total gate charge of 225 nC at 10V, making it suitable for use in demanding environments requiring reliable thermal performance and efficient power delivery.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.