IPB17N25S3100ATMA1N-Channel 250 V 17A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
1:$1.9320
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ABRmicro #.ABR2045-IPB17N-951540
ManufacturerInfineon Technologies
MPN #.IPB17N25S3100ATMA1
Estimated Lead Time12 Weeks
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Datasheet
IPB17N25S3-100, IPP17N25S3-100(PDF)
IPB17N25S3-100, IPP17N25S3-100(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9320
Ext. Price$ 1.9320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9320$1.9320
10$1.6070$16.0650
100$1.2780$127.8190
500$1.0820$540.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPB17N25
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance100mOhm @ 17A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 54µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB17N25S3100ATMA1 is a semiconductor device manufactured by Infineon Technologies, specifically an N-Channel MOSFET. It is designed to handle a maximum voltage of 250 V and a continuous current of 17 A at the case. This MOSFET offers a low on-state resistance of 100 mOhm at a gate-source voltage of 10V and a current of 17A. It can dissipate up to 107W at the case and is housed in a surface mount PG-TO263-3-2 package, making it suitable for applications requiring efficient power handling and compact design.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.