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IPB140N08S404ATMA1N-Channel 80 V 140A (Tc) 161W (Tc) Surface Mount PG-TO263-7-3

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ABRmicro #.ABR2045-IPB140-940424
MPN #.IPB140N08S404ATMA1
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB140
Continuous Drain Current (ID) @ 25°C140A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5500 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation161W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-7-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB140N08S404ATMA1 is an N-Channel MOSFET produced by Infineon Technologies, designed for surface mount applications with a PG-TO263-7-3 package. It is capable of handling a maximum drain-source voltage of 80 V and can conduct continuous drain current up to 140A at a case temperature (Tc). It has a power dissipation capacity of 161W at Tc, enabling efficient thermal management. This component features a low on-resistance of 4.2 milliohms when subjected to a 100A current with a gate-source voltage of 10V. It exhibits an input capacitance of 5500 pF at a 25V, contributing to its switching characteristics, and has a threshold voltage of 4V at a drain current of 100µA.
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