IPB120N06S4H1ATMA1N-Channel 60 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB120-994128
ManufacturerInfineon Technologies
MPN #.IPB120N06S4H1ATMA1
Estimated Lead Time-
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Datasheet
IPx120N06S4-H1(PDF)
IPx120N06S4-H1(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPB120N
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)270 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)21900 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance2.1mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 200µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB120N06S4H1ATMA1 is a high-performance N-channel MOSFET designed by Infineon Technologies. This device operates with a maximum voltage of 60V and can handle a continuous current of up to 120A under optimal conditions. Offering a total power dissipation of 250W, it is housed in a surface-mountable PG-TO263-3-2 package, which is suitable for efficient thermal management. The MOSFET features a gate charge of 270 nC at 10V, which indicates its capability to switch efficiently with a standard gate drive voltage. This allows the device to be suitable for a variety of electronic designs that require reliable and efficient switching performance.
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