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IPB10N03LBN-Channel 30 V 50A (Tc) 58W (Tc) Surface Mount PG-TO263-3

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ABRmicro #.ABR2045-IPB10N-929873
MPN #.IPB10N03LB
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB10N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1639 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation58W (Tc)
RDS(on) Drain-to-Source On Resistance9.6mOhm @ 50A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 20µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB10N03LB is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, housed in a PG-TO263-3 package. It is designed to handle a maximum drain-source voltage of 30V and can conduct a continuous drain current of up to 50A under specific conditions (Tc). The device can dissipate up to 58W of power (Tc) and operates effectively with a gate-source voltage of 4.5V or 10V. It features a gate threshold voltage of 2V at a gate current of 20µA and has an input capacitance of 1639 pF measured at a drain-source voltage of 15V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.