IPB072N15N3GATMA1N-Channel 150 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
1:$4.5910
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ABRmicro #.ABR2045-IPB072-1006949
ManufacturerInfineon Technologies
MPN #.IPB072N15N3GATMA1
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
IPx072,75N15N3 G(PDF)
IPx072,75N15N3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.5910
Ext. Price$ 4.5910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.5910$4.5910
10$3.8580$38.5790
100$3.1210$312.0560
500$2.7740$1387.0940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPB072
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)93 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5470 pF @ 75 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance7.2mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 270µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB072N15N3GATMA1 is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, designed for high power applications with a drain-source voltage of 150 V and a continuous drain current of 100 A under specified conditions. It has a total gate charge of 93 nC at 10 V and a low on-state resistance of 7.2mOhm at 100 A, 10 V, ensuring efficient performance. This MOSFET is housed in a PG-TO263-3-2 package and can handle power dissipation up to 300W with appropriate thermal management. Additionally, it features an input capacitance of 5470 pF at 75 V, contributing to its switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.