IPB06N03LA GN-Channel 25 V 50A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB06N-1023548
ManufacturerInfineon Technologies
MPN #.IPB06N03LA G
Estimated Lead Time-
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Datasheet
IPB06N03LA G(PDF)
IPB06N03LA G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB06N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2653 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance5.9mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 40µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB06N03LA G from Infineon Technologies is a surface-mount N-channel MOSFET designed for various electronic applications. It features a voltage rating of 25V and a continuous current rating of 50A under specific conditions (Tc). The device can handle power dissipation up to 83W (Tc). With a gate source voltage rating of ±20V, it provides a robust solution for switching operations. Housed in a PG-TO263-3-2 package, this MOSFET offers a capacitance of 2653 pF at 15V, making it suitable for efficient power distribution and management.
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