IPB050N06NGATMA1N-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3
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ABRmicro #.ABR2045-IPB050-992404
ManufacturerInfineon Technologies
MPN #.IPB050N06NGATMA1
Estimated Lead Time-
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Datasheet
IPB,IPP050N06N G(PDF)
IPB,IPP050N06N G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPB050N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)167 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6100 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4.7mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 270µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB050N06NGATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency switching applications. It can handle a drain-source voltage of up to 60 V and supports a continuous drain current of 100A at a case temperature (Tc), with a power dissipation capacity of 300W. Housed in a PG-TO263-3 surface mount package, the device features a total gate charge of 167 nC at 10 V and a typical input capacitance of 6100 pF at 30 V. These specifications make it suitable for high-performance power management in compact designs.
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