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IPB042N03LGATMA1N-Channel 30 V 70A (Tc) 79W (Tc) Surface Mount PG-TO263-3

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ABRmicro #.ABR2045-IPB042-1023899
MPN #.IPB042N03LGATMA1
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB042N
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3900 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB042N03LGATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle a voltage of 30V and a current of 70A at standard conditions, with a power dissipation capability of 79W when mounted on a suitable heatsink. It features a surface mount PG-TO263-3 package, which facilitates efficient thermal management. The MOSFET is optimized to operate at gate-source voltages of 4.5V and 10V, with a maximum gate-to-source voltage tolerance of ±20V. Its robust design ensures reliable performance in power management applications requiring efficient electronic switching.
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