IPB034N03LGATMA1N-Channel 30 V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3
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ABRmicro #.ABR2045-IPB034-939610
ManufacturerInfineon Technologies
MPN #.IPB034N03LGATMA1
Estimated Lead Time-
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Datasheet
IP(B,P)034N03L G(PDF)
IP(B,P)034N03L G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB034
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)51 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5300 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation94W (Tc)
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB034N03LGATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with a PG-TO263-3 package. This component can handle a continuous current of 80A under optimal thermal conditions and has a maximum power dissipation of 94W. It operates effectively within a voltage range, featuring a gate threshold voltage of 2.2V at a gate current of 250µA, and is suitable for operation at gate-source voltages of 4.5V and 10V. This MOSFET offers a robust solution for situations requiring efficient handling of high current loads in compact PCB layouts.
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