IPB015N08N5ATMA1N-Channel 80 V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7
1:$5.9330
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPB015-950356
ManufacturerInfineon Technologies
MPN #.IPB015N08N5ATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
IPB015N08N5(PDF)
IPB015N08N5(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.9330
Ext. Price$ 5.9330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.9330$5.9330
10$5.0870$50.8730
100$4.2390$423.9380
500$3.7410$1870.5310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPB015
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)222 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)16900 pF @ 40 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance1.5mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 279µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB015N08N5ATMA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for high power and efficiency. It operates at a maximum voltage of 80V and can handle currents up to 180A, with a power dissipation of 375W under specified conditions. This MOSFET features a typical gate threshold voltage of 3.8V at 279µA and can switch effectively with gate-source voltages of 6V and 10V. It is housed in a PG-TO263-7 surface-mount package, making it suitable for integration into compact electronic designs where robust performance is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.