IPAW60R380CEXKSA1N-Channel 600 V 15A (Tc) 31W (Tc) Through Hole PG-TO220-FP
1:$0.7540
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ABRmicro #.ABR2045-IPAW60-931277
ManufacturerInfineon Technologies
MPN #.IPAW60R380CEXKSA1
Estimated Lead Time-
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Datasheet
IPAW60R380CE(PDF)
IPAW60R380CE(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.7540
Ext. Price$ 0.7540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
450$0.7540$339.4690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPAW60
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation31W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 3.8A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 320µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPAW60R380CEXKSA1 by Infineon Technologies is a discrete N-Channel power MOSFET designed for versatile electrical applications. It features a maximum voltage rating of 600 V and can handle a current of up to 15A under specific conditions (Tc). With a power dissipation capability of 31W when mounted on a suitable heatsink, this MOSFET is suitable for thermal management in its applications. Its package type is a PG-TO220-FP, a familiar through-hole design that allows for straightforward integration into various circuits. Additional specifications include an input capacitance of 700 pF at 100 V and a threshold voltage of 10V, making this component adaptable for different switching and amplification roles in electronic systems.
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