IPAN70R450P7SXKSA1N-Channel 700 V 10A (Tc) 22.7W (Tc) Through Hole PG-TO220-FP
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ABRmicro #.ABR2045-IPAN70-996258
ManufacturerInfineon Technologies
MPN #.IPAN70R450P7SXKSA1
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Datasheet
IPAN70R450P7S(PDF)
IPAN70R450P7S(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P7
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPAN70
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)424 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation22.7W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 2.3A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 120µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPAN70R450P7SXKSA1 from Infineon Technologies is an N-channel power MOSFET featuring a maximum drain-source voltage of 700 volts and a continuous drain current of 10 amps under specified conditions (Tc). It is encapsulated in a through-hole PG-TO220-FP package, offering a power dissipation of 22.7 watts at a specified case temperature. Key electrical characteristics include a total gate charge of 13.1 nanocoulombs at 10 volts and a typical input capacitance of 424 picofarads at 400 volts. The device also endures a maximum gate-source voltage of ±16 volts, contributing to its robustness in demanding environments.
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