IPA90R800C3XKSA1N-Channel 900 V 6.9A (Tc) 33W (Tc) Through Hole PG-TO220-FP
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ABRmicro #.ABR2045-IPA90R-979584
ManufacturerInfineon Technologies
MPN #.IPA90R800C3XKSA1
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Datasheet
IPA90R800C3(PDF)
IPA90R800C3(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPA90R
Continuous Drain Current (ID) @ 25°C6.9A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation33W (Tc)
RDS(on) Drain-to-Source On Resistance800mOhm @ 4.1A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 460µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPA90R800C3XKSA1 is a semiconductor device manufactured by Infineon Technologies, designed as an N-Channel MOSFET suited for high-voltage applications. It operates at a maximum drain-source voltage of 900V, with a continuous drain current of 6.9A and a power dissipation capacity of 33W under standard conditions at the case temperature (Tc). The MOSFET features an RDS(on) of 800 milliohms at 4.1A, when driven with a gate-source voltage of 10V, and a threshold voltage of 3.5V at a drain current of 460µA. The packaging offered is the industry-standard PG-TO220-FP, which facilitates through-hole mounting for efficient thermal management and secure electrical connections.
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