IPA90R340C3XKSA2N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP
1:$4.7360
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPA90R-940145
ManufacturerInfineon Technologies
MPN #.IPA90R340C3XKSA2
Estimated Lead Time15 Weeks
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Datasheet
IPA90R340C3(PDF)
IPA90R340C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.7360
Ext. Price$ 4.7360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.7360$4.7360
10$3.9740$39.7380
100$3.2150$321.5130
500$2.8580$1429.0630
1000$2.4470$2446.9380
2000$2.3040$4607.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPA90R340
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)94 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance340mOhm @ 9.2A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPA90R340C3XKSA2, manufactured by Infineon Technologies, is a high-voltage N-Channel MOSFET designed for efficient power management solutions. This component is capable of handling a maximum voltage of 900 V and a continuous current of up to 15A under specified conditions. It features a low on-resistance of 340mOhm at 9.2A and a gate-to-source voltage threshold of ±20V, housed in a PG-TO220-FP through-hole package. With a maximum power dissipation of 35W, this device is suitable for scenarios requiring robust and reliable switching performance.
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