IPA65R065C7XKSA1N-Channel 650 V 15A (Tc) 34W (Tc) Through Hole PG-TO220-FP
1:$3.8220
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPA65R-914168
ManufacturerInfineon Technologies
MPN #.IPA65R065C7XKSA1
Estimated Lead Time17 Weeks
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Datasheet
IPA65R065C7(PDF)
IPA65R065C7(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 3.8220
Ext. Price$ 3.8220
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.8220$3.8220
10$3.2750$32.7500
100$2.8270$282.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPA65R065
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)64 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3020 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation34W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 17.1A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 850µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)