IPA60R650CEXKSA1N-Channel 600 V 7A (Tc) 28W (Tc) Through Hole PG-TO220-FP
1:$0.7010
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPA60R-1006940
ManufacturerInfineon Technologies
MPN #.IPA60R650CEXKSA1
Estimated Lead Time15 Weeks
SampleGet Free Sample
Datasheet
IPD60R650CE, IPA60R650CE(PDF)
IPD60R650CE, IPA60R650CE(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7010
Ext. Price$ 0.7010
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7010$0.7010
50$0.5630$28.1560
100$0.4460$44.6250
500$0.3780$189.1250
1000$0.3740$374.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPA60R650
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation28W (Tc)
RDS(on) Drain-to-Source On Resistance650mOhm @ 2.4A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 200µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPA60R650CEXKSA1 is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 600 V and a continuous current up to 7A under specific conditions such as at the case temperature (Tc). This component has a total power dissipation of 28W when mounted in a through-hole package designated as PG-TO220-FP. The MOSFET features a gate charge of 20.5 nC at a voltage of 10V and can handle gate-source voltages of up to ±20V, making it suitable for various high-voltage and high-power configurations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.