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IPA60R600P7XKSA1N-Channel 600 V 6A (Tc) 21W (Tc) Through Hole PG-TO220-FP
1:$0.7890
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPA60R-914802
ManufacturerInfineon Technologies
MPN #.IPA60R600P7XKSA1
Estimated Lead Time17 Weeks
SampleGet Free Sample
DatasheetIPA60R600P7 Datasheet(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 0.7890
Ext. Price$ 0.7890
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7890$0.7890
50$0.6360$31.8000
100$0.5040$50.4000
500$0.4270$213.5000
1000$0.4230$423.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPA60R600
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)363 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation21W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 1.7A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 80µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)