IPA60R360P7SE8228XKSA1N-Channel 600 V 9A (Tc) 22W (Tc) Through Hole PG-TO220-FP
1:$0.5450
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ABRmicro #.ABR2045-IPA60R-1036362
ManufacturerInfineon Technologies
MPN #.IPA60R360P7SE8228XKSA1
Estimated Lead Time17 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5450
Ext. Price$ 0.5450
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
500$0.5450$272.5310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ P7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPA60R360
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)555 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation22W (Tc)
RDS(on) Drain-to-Source On Resistance360mOhm @ 2.7A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 140µA
Package / CaseTO-220-3 Full Pack
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPA60R360P7SE8228XKSA1 from Infineon Technologies is an N-channel MOSFET designed for high-voltage applications, featuring a 600 V breakdown voltage and a current capacity of 9A under specific thermal conditions (Tc). Packaged in a PG-TO220-FP format for through-hole mounting, it supports efficient thermal management with a power dissipation of 22W. The MOSFET exhibits an on-resistance of 360mOhm when carrying 2.7A with a gate-source voltage of 10V, and it has a gate threshold voltage of 4V at a gate current of 140µA. This component balances high voltage handling with moderate on-resistance and is suitable for integration into various electronic circuits that require reliable voltage and current control.
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