IPA50R299CPXKSA1N-Channel 550 V 12A (Tc) 104W (Tc) Through Hole PG-TO220-3-31
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ABRmicro #.ABR2045-IPA50R-927859
ManufacturerInfineon Technologies
MPN #.IPA50R299CPXKSA1
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Datasheet
IPA50R299CP(PDF)
IPA50R299CP(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPA50R
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)550 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1190 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation104W (Tc)
RDS(on) Drain-to-Source On Resistance299mOhm @ 6.6A, 10V
Package Type (Mfr.)PG-TO220-3-31
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 440µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies IPA50R299CPXKSA1 is an N-channel power MOSFET designed for high-efficiency performance with a maximum voltage rating of 550 V and a continuous drain current of 12A under specific conditions (Tc). The device features a power dissipation capacity of 104W (Tc) and is encapsulated in a PG-TO220-3-31 through-hole package. Key electrical characteristics include a gate charge of 31 nC at 10 V, an input capacitance of 1190 pF at 100 V, and an on-resistance of 299 mOhm at a drain current of 6.6A and gate-source voltage of 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.