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IPA50R140CPXKSA1N-Channel 500 V 23A (Tc) 34W (Tc) Through Hole PG-TO220-3-31
1:$3.3530
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPA50R-1038564
ManufacturerInfineon Technologies
MPN #.IPA50R140CPXKSA1
Estimated Lead Time15 Weeks
SampleGet Free Sample
DatasheetIPA50R140CP(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 3.3530
Ext. Price$ 3.3530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$3.3530$167.6630
100$2.8740$287.4060
250$2.7150$678.6720
500$2.5550$1277.6560
1250$2.1880$2734.6090
2500$2.0600$5150.4690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPA50R140
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)64 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2540 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation34W (Tc)
RDS(on) Drain-to-Source On Resistance140mOhm @ 14A, 10V
Package Type (Mfr.)PG-TO220-3-31
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 930µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPA50R140CPXKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed to handle high voltage and current. With a voltage rating of 500 V and a current capacity of 23A at case temperature (Tc), it is capable of supporting significant power loads up to 34W. The component is encapsulated in a PG-TO220-3-31 through-hole package, making it suitable for secure mounting and efficient thermal management. It features a capacitance of 2540 pF at 100 V, a gate-source voltage tolerance of ±20V, and exhibits an on-resistance of 140 mOhm when conducting 14A at a gate-source voltage of 10V.
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