IMZ120R140M1HXKSA1N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-4-1
1:$7.1880
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ABRmicro #.ABR2045-IMZ120-940990
ManufacturerInfineon Technologies
MPN #.IMZ120R140M1HXKSA1
Estimated Lead Time20 Weeks
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Datasheet
IMZ120R140M1H(PDF)
IMZ120R140M1H(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 7.1880
Ext. Price$ 7.1880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$7.1880$7.1880
30$5.7400$172.1890
120$5.1350$616.2080
510$4.5320$2311.0970
1020$4.0790$4160.5160
2010$3.8220$7681.8430
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolSiC™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIMZ120
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V, 18V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 18 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)454 pF @ 800 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation94W (Tc)
RDS(on) Drain-to-Source On Resistance182mOhm @ 6A, 18V
Package Type (Mfr.)PG-TO247-4-1
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+23V, -7V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.7V @ 2.5mA
Package / CaseTO-247-4
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IMZ120R140M1HXKSA1 is a power semiconductor component manufactured by Infineon Technologies. It is an N-Channel MOSFET designed to handle voltages up to 1200 V and a continuous current of 19A, with a maximum power dissipation of 94W under specified conditions. The device comes in a PG-TO247-4-1 package that facilitates through-hole mounting. Key electrical characteristics include a gate-source voltage threshold of 5.7V at a test current of 2.5mA, an output capacitance of 454 pF at 800 V, and gate-source and gate-drain voltage tolerances of 15V and 18V, respectively.
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