IMW65R048M1HXKSA1N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
1:$6.2360
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IMW65R-134973
ManufacturerInfineon Technologies
MPN #.IMW65R048M1HXKSA1
Estimated Lead Time26 Weeks
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Datasheet
IMW65R048M1H(PDF)
IMW65R048M1H(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 6.2360
Ext. Price$ 6.2360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.2360$6.2360
30$5.2280$156.8400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolSIC™ M1
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIMW65R048
Continuous Drain Current (ID) @ 25°C39A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))18V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 18 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1118 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance64mOhm @ 20.1A, 18V
Package Type (Mfr.)PG-TO247-3-41
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+23V, -5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.7V @ 6mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)