IMW120R090M1HXKSA1N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
1:$8.0190
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ABRmicro #.ABR2045-IMW120-961559
ManufacturerInfineon Technologies
MPN #.IMW120R090M1HXKSA1
Estimated Lead Time20 Weeks
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Datasheet
IMW120R090M1H(PDF)
IMW120R090M1H(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 8.0190
Ext. Price$ 8.0190
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.0190$8.0190
30$6.4010$192.0150
120$5.7260$687.0980
510$5.0530$2577.1580
1020$4.5480$4638.4500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolSiC™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIMW120
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V, 18V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 18 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)707 pF @ 800 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation115W (Tc)
RDS(on) Drain-to-Source On Resistance117mOhm @ 8.5A, 18V
Package Type (Mfr.)PG-TO247-3-41
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+23V, -7V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.7V @ 3.7mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IMW120R090M1HXKSA1 is a high-performance N-channel MOSFET manufactured by Infineon Technologies. Designed for low conduction losses and high efficiency, this transistor can handle a maximum drain-source voltage (Vds) of 1200 V and a continuous current rating of 26A at a case temperature (Tc). It dissipates up to 115W at Tc through its PG-TO247-3-41 package, which is ideal for through-hole mounting. The MOSFET features a gate threshold voltage of 5.7V, with a gate-source voltage range from +23V to -7V. Additionally, it has an input capacitance of 707 pF at 800 V, contributing to its dynamic power switching capabilities.
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