IAUC120N04S6N009ATMA1N-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-33
1:$2.2570
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IAUC12-944593
ManufacturerInfineon Technologies
MPN #.IAUC120N04S6N009ATMA1
Estimated Lead Time18 Weeks
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Datasheet
IAUC120N04S6N009(PDF)
IAUC120N04S6N009(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.2570
Ext. Price$ 2.2570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2570$2.2570
10$1.8770$18.7740
100$1.4940$149.3880
500$1.2640$632.1880
1000$1.0730$1073.1250
2000$1.0190$2037.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIAUC120
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))7V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)115 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7360 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance0.9mOhm @ 60A, 10V
Package Type (Mfr.)PG-TDSON-8-33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.4V @ 90µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part with the designation IAUC120N04S6N009ATMA1, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for handling substantial power with a voltage rating of 40V and a maximum current capacity of 120A (Tc). It is capable of dissipating up to 150W (Tc) of power. This component comes in a compact surface mount PG-TDSON-8-33 package. It has a gate threshold voltage ranging between 7V and 10V, and an output charge of 115 nC at 10V. The part exhibits low on-state resistance, measuring 0.9mOhm at 60A, 10V, making it suitable for efficient power management in high-current applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.