IAUC100N08S5N043ATMA1N-Channel 80 V 100A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-34
1:$1.7270
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-IAUC10-129670
ManufacturerInfineon Technologies
MPN #.IAUC100N08S5N043ATMA1
Estimated Lead Time18 Weeks
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Datasheet
IAUC100N08S5N04... (PDF)
IAUC100N08S5N04... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.7270
Ext. Price$1.7270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7270$1.7270
10$1.4350$14.3540
100$1.1420$114.2190
500$0.9670$483.4380
1000$0.8200$820.2500
2000$0.7790$1557.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesOptiMOS™-5
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIAUC100
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3860 pF @ 40 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-34
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 63µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The IAUC100N08S5N043ATMA1 by Infineon Technologies is an N-Channel MOSFET characterized by its ability to handle a drain-source voltage of up to 80V and a continuous current of 100A at the case temperature. It is encapsulated in a compact PG-TDSON-8-34 surface-mount package and can dissipate power up to 125W under optimal thermal conditions. The device is designed for operation with gate-source voltage ratings of ±20V and exhibits an RDS(on) with drive voltages of 6V and 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.