IAUA200N04S5N010AUMA1N-Channel 40 V 200A (Tc) 167W (Tc) Surface Mount PG-HSOF-5-1
1:$2.2310
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ABRmicro #.ABR2045-IAUA20-1002148
ManufacturerInfineon Technologies
MPN #.IAUA200N04S5N010AUMA1
Estimated Lead Time18 Weeks
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Datasheet
IAUA200N04S5N010(PDF)
IAUA200N04S5N010(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.2310
Ext. Price$ 2.2310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2310$2.2310
10$1.8530$18.5300
100$1.4750$147.4750
500$1.2470$623.6880
1000$1.0590$1059.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™-5
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIAUA200
Continuous Drain Current (ID) @ 25°C200A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))7V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)132 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7650 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation167W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1mOhm @ 100A, 10V
Package Type (Mfr.)PG-HSOF-5-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.4V @ 100µA
Package / Case5-PowerSFN
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part IAUA200N04S5N010AUMA1 from Infineon Technologies is an N-Channel MOSFET designed for surface mounting, encapsulated in a PG-HSOF-5-1 package. It operates at a voltage rating of 40 V and a current capacity of 200 A under specific conditions (Tc). The power dissipation of the device is rated at 167 W (Tc). It features a typical input capacitance of 7650 pF at 25 V. The on-resistance is notably low at 1 mOhm when operating at 100 A with 10 V applied. Additionally, the gate threshold voltage of this MOSFET is specified at 3.4V for a drain current of 100µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.