BUZ73E3046XKN-Channel 200 V 7A (Tc) 40W (Tc) Through Hole PG-TO220-3
1:$0.5120
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ABRmicro #.ABR2045-BUZ73E-945431
ManufacturerInfineon Technologies
MPN #.BUZ73E3046XK
Estimated Lead Time-
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Datasheet
BUZ73(PDF)
BUZ73(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5120
Ext. Price$ 0.5120
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Price Gradients
Qty.Unit PriceExt. Price
500$0.5120$256.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Base Product NumberBUZ73
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)530 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance400mOhm @ 4.5A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUZ73E3046XK is an N-Channel MOSFET transistor manufactured by Infineon Technologies. Encased in a PG-TO220-3 package, it is designed for through-hole mounting. This component operates with a drain-source voltage of up to 200 volts and can handle a continuous drain current of 7 amperes at a case temperature of 25°C, dissipating a maximum power of 40 watts. It features a gate threshold voltage of 4 volts at a gate current of 1mA, and its on-state resistance is 400 milliohms when conducting a drain current of 4.5 amperes at a gate-source voltage of 10 volts.
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