BUZ31H3046XKSA1N-Channel 200 V 14.5A (Tc) 95W (Tc) Through Hole PG-TO262-3-1
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUZ31H-950848
ManufacturerInfineon Technologies
MPN #.BUZ31H3046XKSA1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
BUZ31H3046(PDF)
BUZ31H3046(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C14.5A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1120 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation95W (Tc)
RDS(on) Drain-to-Source On Resistance200mOhm @ 9A, 5V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUZ31H3046XKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 200 V and a continuous current of 14.5 A at a case temperature (Tc). This component is capable of dissipating up to 95 W of power under specified conditions, and features a low on-state resistance of 200 milliohms when conducting a current of 9 A at 5 V. It also supports a maximum gate-source voltage of ±20 V and demonstrates a threshold voltage of 4 V at a current of 1 mA. The MOSFET is packaged in a PG-TO262-3-1 through-hole configuration, suitable for various electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.