BTS282Z E3180AN-Channel 49 V 80A (Tc) 300W (Tc) Surface Mount PG-TO220-7-180
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ABRmicro #.ABR2045-BTS282-1040309
ManufacturerInfineon Technologies
MPN #.BTS282Z E3180A
Estimated Lead Time-
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Datasheet
BTS282Z(PDF)
BTS282Z(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesTEMPFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)49 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureTemperature Sensing Diode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)232 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4800 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 36A, 10V
Package Type (Mfr.)PG-TO220-7-180
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 240µA
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BTS282Z E3180A is an N-Channel power MOSFET manufactured by Infineon Technologies, designed for surface mount applications utilizing the PG-TO220-7-180 package. It operates at a maximum voltage of 49V and can handle a current of up to 80A at a case temperature (Tc), with a power dissipation of 300W under the same conditions. This device features a low on-resistance of 6.5mOhm at 36A and 10V gate-source voltage, and can withstand gate-source voltages up to ±20V. Additionally, it has an input capacitance of 4800 pF at 25V, providing effective performance in power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.