BSZ105N04NSGATMA1N-Channel 40 V 11A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8
N/A
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ABRmicro #.ABR2045-BSZ105-925254
ManufacturerInfineon Technologies
MPN #.BSZ105N04NSGATMA1
Estimated Lead Time-
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Datasheet
BSZ105N04NSG(PDF)
BSZ105N04NSG(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C11A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 20 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 35W (Tc)
RDS(on) Drain-to-Source On Resistance10.5mOhm @ 20A, 10V
Package Type (Mfr.)PG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 14µA
Package / Case8-PowerTDFN
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Datasheets
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSZ105N04NSGATMA1 is an N-channel MOSFET produced by Infineon Technologies, designed for power management and switching applications. It features a maximum drain-source voltage of 40V and offers a continuous drain current of 11A in free air (Ta) and 40A when mounted on a proper heat sinking surface (Tc). The part has a total power dissipation capacity of 2.1W in free air and 35W on a heat sink. It comes in a compact surface mount PG-TSDSON-8 package. The device has a gate charge of 17 nC at 10V, and its on-resistance is 10.5mOhm at a drain current of 20A and a gate-source voltage of 10V. It is capable of withstanding a gate-source voltage of ±20V, making it suitable for use in a variety of electronic circuits.
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