BSZ034N04LSATMA1N-Channel 40 V 19A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TSDSON-8-FL
1:$0.9230
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSZ034-950446
ManufacturerInfineon Technologies
MPN #.BSZ034N04LSATMA1
Estimated Lead Time20 Weeks
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Datasheet
BSZ034N04LS(PDF)
BSZ034N04LS(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9230
Ext. Price$ 0.9230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9230$0.9230
10$0.7590$7.5860
100$0.5900$58.9690
500$0.5000$250.2190
1000$0.4070$406.9380
2000$0.3830$765.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSZ034
Continuous Drain Current (ID) @ 25°C19A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 20 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 52W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 20A, 10V
Package Type (Mfr.)PG-TSDSON-8-FL
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSZ034N04LSATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management in electronic circuits. It operates with a maximum drain-source voltage of 40 volts and a drain current of up to 19A in ambient conditions or 40A when mounted on a suitable heat sink. The device offers a low on-state resistance of 3.4 milliohms at a gate voltage of 10V and a drain current of 20A, ensuring minimal power loss during operation. It features a gate charge of 25 nC at 10V, facilitating efficient switching. Available in a compact, surface-mount PG-TSDSON-8-FL package, this MOSFET is suitable for high-density circuit designs, providing a thermal dissipation capability of 2.1W in free air and 52W when adequately cooled.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.