BSZ028N04LSATMA1N-Channel 40 V 21A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8-FL
1:$0.9400
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSZ028-967594
ManufacturerInfineon Technologies
MPN #.BSZ028N04LSATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSZ028N04LS(PDF)
BSZ028N04LS(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 11226
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9400
Ext. Price$ 0.9400
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9400$0.9400
10$0.7690$7.6930
100$0.5980$59.8190
500$0.5080$253.9380
1000$0.4120$412.2500
2000$0.3890$777.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSZ028
Continuous Drain Current (ID) @ 25°C21A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2300 pF @ 20 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 63W (Tc)
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 20A, 10V
Package Type (Mfr.)PG-TSDSON-8-FL
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSZ028N04LSATMA1 is a power MOSFET manufactured by Infineon Technologies. It is an N-Channel device designed for a maximum voltage of 40 volts. The part can handle current ratings of up to 21A in ambient conditions (Ta) and 40A on a thermal-controlled setup (Tc). In terms of power dissipation, it supports 2.1W in a standard environment and up to 63W with proper heat management. Packaged in a PG-TSDSON-8-FL surface-mount design, the MOSFET offers a gate charge of 32 nC at 10 V, functioning optimally at gate-source voltages of 4.5V and 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.