BSZ017NE2LS5IATMA1N-Channel 25 V 27A (Ta), 40A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8-FL
1:$1.3690
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSZ017-967132
ManufacturerInfineon Technologies
MPN #.BSZ017NE2LS5IATMA1
Estimated Lead Time20 Weeks
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Datasheet
BSZ017NE2LS5I(PDF)
BSZ017NE2LS5I(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3690
Ext. Price$ 1.3690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3690$1.3690
10$1.1220$11.2200
100$0.8730$87.3380
500$0.7410$370.2810
1000$0.6020$602.4380
2000$0.5670$1134.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSZ017
Continuous Drain Current (ID) @ 25°C27A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2000 pF @ 12 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance1.7mOhm @ 20A, 10V
Package Type (Mfr.)PG-TSDSON-8-FL
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSZ017NE2LS5IATMA1 from Infineon Technologies is a surface mount N-channel MOSFET designed for efficient performance in compact applications. It accommodates a maximum drain-source voltage of 25 V and can handle current levels up to 40A with adequate cooling, such as through a temperature-controlled case (Tc), and up to 27A in ambient conditions (Ta). The MOSFET features a substantial power dissipation capacity of 2.1W at ambient temperature and 50W with proper heatsinking, emphasizing its suitability for high-power applications. Additionally, it includes a total gate charge of 30 nanocoulombs at a 10V gate-source voltage and offers ESD protection up to ±16V, housed in an advanced PG-TSDSON-8-FL package to support space-constrained designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.