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BSV236SPH6327XTSA1P-Channel 20 V 1.5A (Ta) 560mW (Ta) Surface Mount PG-SOT363-PO

1:$0.3840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSV236-1016220
MPN #.BSV236SPH6327XTSA1
Estimated Lead Time20 Weeks
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DatasheetDatasheetBSV236SP(PDF)
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In Stock: 8744
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.2950$2.9540
100$0.1770$17.7440
500$0.1650$82.3440
1000$0.1120$111.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSV236
Continuous Drain Current (ID) @ 25°C1.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)5.7 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)228 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation560mW (Ta)
RDS(on) Drain-to-Source On Resistance175mOhm @ 1.5A, 4.5V
Package Type (Mfr.)PG-SOT363-PO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 8µA
Package / Case6-VSSOP, SC-88, SOT-363
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies BSV236SPH6327XTSA1 is a P-Channel MOSFET designed for low-voltage applications with a maximum drain-source voltage of 20 V and a continuous drain current of 1.5A when mounted on a sufficiently large heat sink to handle 560mW of power. This surface-mount device is encapsulated in a PG-SOT363 package, offering compact size and efficient thermal performance. It features a gate-source capacitance of 228 pF at 15 V, with gate threshold voltages specified at 2.5V and 4.5V, allowing it to switch efficiently and reliably in various circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.