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BSV236SPH6327XTSA1P-Channel 20 V 1.5A (Ta) 560mW (Ta) Surface Mount PG-SOT363-PO
1:$0.3840
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSV236-1016220
ManufacturerInfineon Technologies
MPN #.BSV236SPH6327XTSA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetBSV236SP(PDF)
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In Stock: 8744
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.2950$2.9540
100$0.1770$17.7440
500$0.1650$82.3440
1000$0.1120$111.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSV236
Continuous Drain Current (ID) @ 25°C1.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)5.7 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)228 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation560mW (Ta)
RDS(on) Drain-to-Source On Resistance175mOhm @ 1.5A, 4.5V
Package Type (Mfr.)PG-SOT363-PO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 8µA
Package / Case6-VSSOP, SC-88, SOT-363
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies BSV236SPH6327XTSA1 is a P-Channel MOSFET designed for low-voltage applications with a maximum drain-source voltage of 20 V and a continuous drain current of 1.5A when mounted on a sufficiently large heat sink to handle 560mW of power. This surface-mount device is encapsulated in a PG-SOT363 package, offering compact size and efficient thermal performance. It features a gate-source capacitance of 228 pF at 15 V, with gate threshold voltages specified at 2.5V and 4.5V, allowing it to switch efficiently and reliably in various circuits.
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