BSS159NH6327XTSA2N-Channel 60 V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
1:$0.3840
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ABRmicro #.ABR2045-BSS159-1015829
ManufacturerInfineon Technologies
MPN #.BSS159NH6327XTSA2
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSS159N(PDF)
BSS159N(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.3260$3.2620
100$0.2260$22.6310
500$0.1770$88.7190
1000$0.1450$144.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSS159
Continuous Drain Current (ID) @ 25°C230mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V, 10V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1.4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)39 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360mW (Ta)
RDS(on) Drain-to-Source On Resistance3.5Ohm @ 160mA, 10V
Package Type (Mfr.)PG-SOT23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 26µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS159NH6327XTSA2 is a surface mount N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 60V and supports a continuous current of up to 230mA when mounted appropriately. This MOSFET has a power dissipation rating of 360mW and features a low on-resistance of 3.5 ohms when driven with a 10V gate-source voltage and a drain current of 160mA. It is housed in a compact PG-SOT23 package and exhibits an input capacitance of 39 pF at 25V, making it suitable for various circuit implementations where space and performance are considerations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.