BSS139H6327XTSA1N-Channel 250 V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
1:$0.3840
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ABRmicro #.ABR2045-BSS139-972238
ManufacturerInfineon Technologies
MPN #.BSS139H6327XTSA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSS139(PDF)
BSS139(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.3300$3.3040
100$0.2310$23.0560
500$0.1800$89.7810
1000$0.1460$145.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSS139
Continuous Drain Current (ID) @ 25°C100mA (Ta)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V, 10V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)3.5 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)76 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360mW (Ta)
RDS(on) Drain-to-Source On Resistance14Ohm @ 100µA, 10V
Package Type (Mfr.)PG-SOT23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 56µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS139H6327XTSA1 is a compact surface-mount N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient electronic switching. It operates at a maximum voltage of 250 V with a continuous current of 100 mA, providing a power dissipation of up to 360 mW under ambient conditions. This MOSFET is housed in a PG-SOT23 package, allowing for easy integration into various circuit designs. It features gate-source and gate-drain voltage ratings of 0V and 10V, withstanding voltages up to ±20V. Additionally, the device presents an input capacitance of 76 pF when measured at 25 V.
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