BSS138W E6433N-Channel 60 V 280mA (Ta) 500mW (Ta) Surface Mount PG-SOT323
1:$0.0410
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ABRmicro #.ABR2045-BSS138-1002153
ManufacturerInfineon Technologies
MPN #.BSS138W E6433
Estimated Lead Time-
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Datasheet
BSS138W Series(PDF)
BSS138W Series(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.0410
Ext. Price$ 0.0410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
10000$0.0410$414.3750
30000$0.0400$1211.2500
50000$0.0330$1646.8750
250000$0.0330$8234.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C280mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)43 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance3.5Ohm @ 220mA, 10V
Package Type (Mfr.)PG-SOT323
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.4V @ 26µA
Package / CaseSC-70, SOT-323
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The BSS138W E6433, manufactured by Infineon Technologies, is a surface mount N-channel MOSFET housed in a PG-SOT323 package. It has a maximum voltage rating of 60 V and can handle up to 280 mA of continuous current at room temperature (Ta). The power dissipation is limited to 500 mW under the same conditions. The device features a low gate threshold voltage of 1.4V at a gate current of 26µA and a total gate charge of 1.5 nC when operated at 10 V. Additionally, it offers a drain-source on-state resistance of 3.5 Ohms when conducting 220 mA at a gate-source voltage of 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.