BSP716NH6327XTSA1N-Channel 75 V 2.3A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
N/A
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ABRmicro #.ABR2045-BSP716-921254
ManufacturerInfineon Technologies
MPN #.BSP716NH6327XTSA1
Estimated Lead Time-
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Datasheet
BSP716N(PDF)
BSP716N(PDF)
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Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberBSP716
Continuous Drain Current (ID) @ 25°C2.3A (Ta)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)315 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance160mOhm @ 2.3A, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.8V @ 218µA
Package / CaseTO-261-4, TO-261AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP716NH6327XTSA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface-mount applications with its PG-SOT223-4 package. It operates at a voltage rating of 75 V and can handle a continuous current of 2.3A at ambient temperature (Ta), dissipating power up to 1.8W. This component has a gate charge of 13.1 nC at 10 V and a gate threshold voltage of 1.8V at 218µA, demonstrating its capability for efficient switching. The device can withstand gate-source voltages up to ±20V, suitable for various electronic circuits requiring reliable switching performance.
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