BSP320SL6433HTMA1N-Channel 60 V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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ABRmicro #.ABR2045-BSP320-1032131
ManufacturerInfineon Technologies
MPN #.BSP320SL6433HTMA1
Estimated Lead Time-
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Datasheet
BSP320S(PDF)
BSP320S(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.9A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)340 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance120mOhm @ 2.9A, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 20µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP320SL6433HTMA1 is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, housed in a PG-SOT223-4 package. It is designed to handle a maximum voltage of 60 V and can support a continuous current of 2.9 A at a power dissipation of 1.8 W when mounted on a suitable surface (Ta). This MOSFET features a gate threshold voltage of 4 V at 20µA and exhibits a total gate charge of 12 nC at 10 V, making it suitable for efficient switching operations in electronic circuits.
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