BSP299H6327XUSA1N-Channel 500 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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ABRmicro #.ABR2045-BSP299-1007880
ManufacturerInfineon Technologies
MPN #.BSP299H6327XUSA1
Estimated Lead Time-
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Datasheet
BSP299(PDF)
BSP299(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C400mA (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance4Ohm @ 400mA, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP299H6327XUSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, notable for its 500 V drain-source voltage and 400 mA continuous drain current, making it suitable for various high-voltage applications. This surface-mount device comes in a compact PG-SOT223-4 package, offering a power dissipation of 1.8 W at standard ambient temperature conditions. It features a drain-source on-state resistance of 4 Ohms at 400 mA and a gate threshold voltage of 4 V at 1 mA. Additionally, the MOSFET has an input capacitance of 400 pF at 25 V, enabling efficient switching performance in its designated operational parameters.
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