BSP299 E6327N-Channel 500 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
1:$0.5190
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ABRmicro #.ABR2045-BSP299-1031305
ManufacturerInfineon Technologies
MPN #.BSP299 E6327
Estimated Lead Time-
SampleGet Free Sample
Datasheet
BSP299(PDF)
BSP299(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5190
Ext. Price$ 0.5190
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.5190$518.5000
2000$0.4880$975.3750
5000$0.4650$2326.8750
10000$0.4430$4430.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C400mA (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance4Ohm @ 400mA, 10V
Package Type (Mfr.)PG-SOT223-4-21
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP299 E6327 is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, designed to handle a voltage of up to 500 V and a continuous drain current of 400 mA at ambient temperature (Ta). It is housed in a PG-SOT223-4-21 package, offering a power dissipation capability of 1.8W under ambient conditions. The MOSFET features a gate-source threshold voltage of 10V and operates with a gate-source voltage of 4V at a current of 1mA, making it suitable for switching and amplification purposes in electronic circuits.
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