BSP298 E6327N-Channel 400 V 500mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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ABRmicro #.ABR2045-BSP298-1017240
ManufacturerInfineon Technologies
MPN #.BSP298 E6327
Estimated Lead Time-
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Datasheet
BSP298(PDF)
BSP298(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C500mA (Ta)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance3Ohm @ 500mA, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP298 E6327 is a surface-mount N-channel MOSFET manufactured by Infineon Technologies, housed in a compact PG-SOT223-4 package. It is designed for handling up to 400 V and a continuous current of 500 mA at a maximum power dissipation of 1.8 W. Key electrical characteristics include a threshold voltage of 10 V, with a maximum gate-source voltage of ±20 V, and an on-state resistance of 3 Ohms at 500 mA and 10 V. Its design makes it suitable for various electronic switching and amplification tasks where space is a constraint.
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