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BSP170PL6327HTSA1P-Channel 60 V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21

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ABRmicro #.ABR2045-BSP170-956501
MPN #.BSP170PL6327HTSA1
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DatasheetDatasheetBSP170P(PDF)
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In Stock: 12
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C1.9A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)410 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance300mOhm @ 1.9A, 10V
Package Type (Mfr.)PG-SOT223-4-21
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP170PL6327HTSA1, manufactured by Infineon Technologies, is a P-Channel MOSFET designed for surface mounting in the PG-SOT223-4-21 package. This component can handle a maximum voltage of 60V and a continuous current of 1.9A under specific conditions (Ta). It has a power dissipation capacity of 1.8W (Ta) and features a gate charge of 14 nC at 10V. With a threshold voltage of 4V at 250µA and a gate-to-source voltage rating of ±20V, this MOSFET is suitable for a variety of electronic applications that require efficient power management and switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.