BSP149 E6906N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
1:$0.4410
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ABRmicro #.ABR2045-BSP149-926247
ManufacturerInfineon Technologies
MPN #.BSP149 E6906
Estimated Lead Time-
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Datasheet
BSP149(PDF)
BSP149(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.4410
Ext. Price$ 0.4410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.4410$440.9380
2000$0.4140$828.7500
5000$0.3950$1976.2500
10000$0.3760$3761.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C660mA (Ta)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V, 10V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance1.8Ohm @ 660mA, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 400µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP149 E6906 is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies. It features a voltage rating of 200 V and a current capacity of 660 mA at ambient temperature. The device offers a power dissipation of 1.8W and includes a low on-resistance of 1.8 Ohms at 660 mA with a gate-to-source voltage of 10V. Packaged in the PG-SOT223-4 form factor, this metal oxide semiconductor field-effect transistor requires a gate threshold voltage of 1V at 400µA, making it suitable for efficient switching in compact electronic designs.
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