BSP149 E6327N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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ABRmicro #.ABR2045-BSP149-938110
ManufacturerInfineon Technologies
MPN #.BSP149 E6327
Estimated Lead Time-
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Datasheet
BSP149(PDF)
BSP149(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C660mA (Ta)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V, 10V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance1.8Ohm @ 660mA, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 400µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP149 E6327 by Infineon Technologies is a surface mount N-channel MOSFET designed to handle voltages up to 200 V and a continuous current of 660mA with a power dissipation of 1.8W at 25°C. It comes in a compact PG-SOT223-4 package, making it suitable for efficient space utilization in circuit designs. The MOSFET features a gate-source voltage threshold of 10V, a low input capacitance of 430 pF at 25 V, and a total gate charge of 14 nC at 5 V, which indicates its capability of fast switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.