BSP129H6327XTSA1N-Channel 240 V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
1:$0.7270
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSP129-1021094
ManufacturerInfineon Technologies
MPN #.BSP129H6327XTSA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSP129(PDF)
BSP129(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7270
Ext. Price$ 0.7270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7270$0.7270
10$0.6320$6.3220
100$0.4380$43.7750
500$0.3670$183.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSP129
Continuous Drain Current (ID) @ 25°C350mA (Ta)
Drain-to-Source Voltage (VDS)240 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V, 10V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.7 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)108 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance6Ohm @ 350mA, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 108µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP129H6327XTSA1 is a semiconductor component manufactured by Infineon Technologies. It is an N-Channel MOSFET, designed for use in a surface mount PG-SOT223-4 package. This component can handle up to 240 V and a continuous drain current of 350 mA at ambient temperature, with a power dissipation capacity of 1.8 W. It features a low gate charge of 5.7 nC at 5 V, and it operates in depletion mode. The device is suitable for compact designs due to its efficient power handling and small package size.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.