BSP125 E6327N-Channel 600 V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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ABRmicro #.ABR2045-BSP125-1039649
ManufacturerInfineon Technologies
MPN #.BSP125 E6327
Estimated Lead Time-
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Datasheet
BSP125(PDF)
BSP125(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C120mA (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)150 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance45Ohm @ 120mA, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 94µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSP125 E6327 is a surface-mount N-channel MOSFET manufactured by Infineon Technologies, housed in a PG-SOT223-4 package. It is designed to handle a maximum voltage of 600V and a continuous current of up to 120mA at ambient temperature (Ta), with a power dissipation capacity of 1.8W (Ta). The device operates at gate-source voltages of 4.5V and 10V, with an input capacitance of 150 pF measured at 25V. This component is suitable for use in various circuits requiring efficient switching and amplification properties inherent to N-channel MOSFETs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.