BSO613SPVGXUMA1P-Channel 60 V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8-6
1:$0.5980
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ABRmicro #.ABR2045-BSO613-960050
ManufacturerInfineon Technologies
MPN #.BSO613SPVGXUMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSO613SPV G(PDF)
BSO613SPV G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5980
Ext. Price$ 0.5980
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5980$0.5980
10$0.4870$4.8660
100$0.3790$37.9310
500$0.3220$160.9690
1000$0.3180$317.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSO613
Continuous Drain Current (ID) @ 25°C3.44A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)875 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance130mOhm @ 3.44A, 10V
Package Type (Mfr.)PG-DSO-8-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSO613SPVGXUMA1 is a P-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management in electronic systems. This semiconductor device features a breakdown voltage of 60 volts and a continuous current capacity of 3.44 amperes when mounted on a standard surface mount package. It has a power dissipation rating of 2.5 watts. The device comes in a PG-DSO-8-6 package, which is conducive for surface mounting, making it suitable for compact PCB designs. The MOSFET offers a maximum gate charge of 30 nC at 10 volts, aligning with its automotive-grade specifications to ensure reliable performance under demanding conditions.
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