BSO203SPNTMA1P-Channel 20 V 9A (Ta) 2.35W (Ta) Surface Mount PG-DSO-8
N/A
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ABRmicro #.ABR2045-BSO203-1006817
ManufacturerInfineon Technologies
MPN #.BSO203SPNTMA1
Estimated Lead Time-
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Datasheet
BSO203SP(PDF)
BSO203SP(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
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SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)50.4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2265 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.35W (Ta)
RDS(on) Drain-to-Source On Resistance21mOhm @ 9A, 4.5V
Package Type (Mfr.)PG-DSO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 100µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSO203SPNTMA1 is a P-Channel MOSFET manufactured by Infineon Technologies, designed to handle a maximum voltage of 20V and a continuous current of 9A when operating at ambient temperature conditions. It has a power dissipation capacity of 2.35W under these conditions and is housed in a compact PG-DSO-8 surface mount package. The MOSFET features a total gate charge of 50.4 nC at 4.5V and can tolerate gate-source voltages up to ±12V. It operates efficiently with gate drive voltages as low as 2.5V and up to 4.5V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.